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NM27LV010 1,048,576-Bit (128k x 8) Low Voltage EPROM
July 1998
NM27LV010 1,048,576-Bit (128k x 8) Low Voltage EPROM
General Description
The NM27LV010 is a high performance Low Voltage Electrically Programmable Read Only Memory. It is manufactured using Fairchild's AMGTM EPROM technology. This technology allows the part to operate at speeds as fast as 200 ns. This Low Voltage and Low Power EPROM is designed with power sensitive hand held and portable battery products in mind. This allows for code storage of firmware for applications like notebook computers, palm top computers, cellular phones, and HDD. Small outline packages are just as critical to portable applications as Low Voltage and Low Power. The NM27LV010 is one member of Fairchild's growing Low Voltage product Family.
Features
s 3.0V to 3.6V operation s 200 ns access time s Low current operation -- 8 mA ICC active current @ 5 MHz (typ.) -- 20A ICC standby current @ 5 MHz (typ.) s Ultra low power operation -- 66 W standby power @ 3.3V -- 50 mW active power @ 3.3V s Surface mount package options| -- 32-pin TSOP -- 32-pin PLCC
Block Diagram
Vcc GND Vpp OE PGM CE Output Enable, Chip Enable & Program Logic Data Outputs O0 - O7
Output Buffers
Y Decoder A0 - A16 Address Inputs 1,048,576-Bit Cell Matrix X Decoder
DS011377-1
AMGTM is a trademark of WSI, Incorporated.
(c) 1998 Fairchild Semiconductor Corporation
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NM27LV010 1,048,576-Bit (128k x 8) Low Voltage EPROM
Connection Diagrams
PLCC Pin Configuration
A12 A15 A16 XX/VPP VCC XX/PGM XX
TSOP Pin Configuration
A11 A9 A8 A13 A14 NC PGM VCC VPP A16 A15 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 8 x 20 MM 9 TSOP 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE O7 O6 O5 O4 O3 VSS O2 O1 O0 A0 A1 A2 A3
DS011377-2
4
3
2
1 32 31 30
A7 A6 A5 A4 A3 A2 A1 A0 O0
5 6 7 8 9 10 11 12 13
14 15 16 17 18 19 20
29 28 27 26 25 24 23 22 21
A14 A13 A8 A9 A11 OE A10 CE O7
O1 O2 GND O3 O4 O5 O6
DS011377-6
Top View
Top View
Commercial Temperature Range (0C to +70C) VCC = 3.3 0.3
Parameter/Order Number
NM27LV010 V, T 200 NM27LV010 V, T 250
Industrial Temperature Range (-40C to +85C) VCC = 3.3 0.3
Parameter/Order Number
NM27LV010 VE, TE NM27LV010 VE, TE Package Types: NM27LV010 V, T
Access Time (ns)
200 250
Access Time (ns)
200 250
Pin Names
A0-A16 CE OE O0-O7 PGM XX VPP Addresses Chip Enable Output Enable Outputs Program Don't Care (During Read) Programming Voltage
V = PLCC T = TSOP * All packages conform to the JEDEC standard. * All versions are guaranteed to function for slower speeds. * Consult the Fairchild Sales office on new released products and packages. * Consult the Fairchild representative for custom products for your specific application.
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NM27LV010 1,048,576-Bit (128k x 8) Low Voltage EPROM
Absolute Maximum Ratings (Note 1)
Storage Temperature All Input Voltages except A9 with Respect to Ground (Note 10) VPP and A9 with Respect to Ground VCC Supply Voltage with Respect to Ground ESD Protection -65C to +150C
All Output Voltages with Respect to Ground (Note 10)
VCC + 1.0V to GND - 0.6V
Operating Range
-0.6V to +7V -0.6V to +14V -0.6V to +7V >2000V
Range
Commercial Industrial
Temperature
0C to +70C -40C to +85C
VCC
3.3V 3.3V
Tolerance
0.3V 0.3V
DC Electrical Characteristics Over Operating Range with VPP = VCC
Symbol
VIL VIH VOL1 VOH1 VOL2 VOH2 ISB1 ISB2 ICC IPP VPP ILI ILO
Parameter
Input Low Level Input High Level Output Low Voltage (TTL) Output High Voltage (TTL) Output Low Voltage Output High Voltage (CMOS) VCC Standby Current (CMOS) VCC Standby Current (TTL) VCC Active Current VPP Supply Current VPP Read Voltage Input Load Current Output Leakage Current
Test Conditions
Min
-0.3 2.0
Max
0.7 VCC + 0.3 0.4
Units
V V V V
IOL = 2.0 mA IOH = -2.0 mA IOL = 100 A IOH = -100 A CE = VCC 0.3V CE = VIH CE = OE = VIL, I/O = 0 A VPP = VCC VCC - 0.7 VIN = 3.0V or GND VOUT = 3.0V or GND -1 f = 5 MHz VCC - 0.3 2.4
0.2
V
50 100 15 10 VCC 1 10
A A mA A V A A
AC Electrical Characteristics Over Operating Range with VPP = VCC
Symbol
tACC tCE tOE tDF (Note 2) tOH (Note 2)
Parameter Min
Address to Output Delay CE to Output Delay OE to Output Delay Output Disable to Output Float Output Hold from Addresses, CE or OE , Whichever Occurred First
200 Max
200 200 70 50
250 Min Max
250 250 75 50
Units
ns
0
0
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NM27LV010 1,048,576-Bit (128k x 8) Low Voltage EPROM
Capacitance (Note 2) TA = +25C, 1 = 1 MHz
Symbol
CIN COUT
Parameter
Input Capacitance Output Capacitance
Conditions
VIN = 0V VOUT = 0V
Typ
9 12
Max
15 15
Units
pF pF
AC Test Conditions
Output Load 1 TTL Gate and CL = 100 pF (Note 8) 5 ns 0.45V to 2.4V 0.8V and 2V 0.8V and 2V Input Rise and Fall Times Input Pulse Levels Timing Measurement Reference Level Inputs Outputs
AC Waveforms (Note 6) , (Note 7) , and (Note 9)
ADDRESS 2.0V 0.8V 2.0V 0.8V Address Valid
CE
OE
2.0V 0.8V
OUTPUT
2.0V 0.8V
t ACC
(Note 3)
Note 1: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operations sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note 2: This parameter is only sampled and is not 100% tested. Note 4: The tDF and tCF compare level is determined as follows: High to TRI-STATE(R), the measured VOH1 (DC) - 0.10V; Low to TRI-STATE, the measured VOL1 (DC) + 0.10V. Note 5: TRI-STATE may be attained using OE or CE . Note 6: The power switching characteristics of EPROMs require careful device decoupling. It is recommended that at least a 0.2 F ceramic capacitor be used on every device between VCC and GND. Note 7: The outputs must be restricted to VCC + 1.0V to avoid latch-up and device damage. Note 8: 1 TTL Gate: IOL = 1.6 mA, IOH = -400 A. CL: 100pF includes fixture capacitance. Note 9: VPP may be connected to VCC except during programming. Note 10: Inputs and outputs can undershoot to -2.0V for 20 ns Max. Note 3: OE may be delayed up to tACC - tCE after the falling edge of CE without impacting tACC.
, ,,
t CF t CE (Note 2, 4, 5) t OE (Note 3) t DF (Note 2, 4, 5) Valid Output Hi-Z t OH
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DS011377-3
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NM27LV010 1,048,576-Bit (128k x 8) Low Voltage EPROM
Programming Characteristics (Note 11), (Note 12), (Note 13) and (Note 14)
Symbol
tAS tOES tCES tDS tVPS tVCS tAH tDH tDF tPW tOE IPP ICC TA VCC VPP tFR VIL VIH tIN tOUT
Parameter
Address Setup Time OE Setup Time CE Setup Time Data Setup Time VPP Setup Time VCC Setup Time Address Hold Time Data Hold Time Output Enable to Output Float Delay Program Pulse Width Data Valid from OE VPP Supply Current during Programming Pulse VCC Supply Current Temperature Ambient Power Supply Voltage Programming Supply Voltage Input Rise, Fall Time Input Low Voltage Input High Voltage Input Timing Reference Voltage Output Timing Reference Voltage
Conditions
Min
1 1 1 1 1 1 0 1
Typ
Max
Units
s s s s s s s s
CE/PGM = VIL
0 45 50
60 105 100 20 20
ns s ns mA mA C V V ns
CE/PGM = VIL CE/PGM = VIL
20 6.25 12.5 5
25 6.5 12.75
30 6.75 13.0
0.0 2.4 0.8 0.8 4.0
0.45
V V
2.0 2.0
V V
Programming Waveform (Note 13)
Program Addresses 2.0V 0.8V t AS 2.0V Data 0.8V t DS Data In Stable ADD N t DH t DF VCC VPP 6.25V t VCS t VPS Hi-Z Address N t AH Data Out Valid ADD N Program Verify
12.75V
CE
t CES
PGM
2.0V 0.8V t PW
tOES
tOE
OE
2.0V 0.8V
DS011377-4 Note 11: Fairchild's standard product warranty applies to devices programmed to specifications described herein. Note 12: VCC must be applied simultaneously or before VPP and removed simultaneously or after VPP. The EPROM must not be inserted into or removedfrom a board with voltage applied to VPP or VCC. Note 13: The maximum absolute allowable voltage which may be applied to the VPP pin during programming is 14V. Care must be taken when switching the VPP supply to prevent any overshoot from exceeding this 14V maximum specification. At least a 0.1 F capacitor is required across VPP, VCC to GND to suppress spurious voltage transients which may damage the device. Note 14: During power up the PGM pin must be brought high ( VIH) either coincident with or before power is applied to VPP.
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NM27LV010 1,048,576-Bit (128k x 8) Low Voltage EPROM
LV Turbo Programming Algorithm Flow Chart
VCC = 6.5V VPP = 12.75V n=0 ADDRESS = FIRST LOCATION
PROGRAM ONE 50s PULSE INCREMENT n
NO
DEVICE FAILED
YES
n = 10?
FAIL
VERIFY BYTE
PASS
LAST ADDRESS ?
YES
NO
INCREMENT ADDRESS n=0
ADDRESS = FIRST LOCATION
VERIFY BYTE INCREMENT ADDRESS
NO PASS
FAIL
PROGRAM ONE 50 s PULSE
LAST ADDRESS ?
YES
CHECK ALL BYTES 1ST: VCC = VPP = 5.0V 2ND: VCC = VPP = 3.0V
DS011377-5 Note: The standard National Semiconductor algorithm may also be used but it will have longer programming time.
FIGURE 1.
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NM27LV010 1,048,576-Bit (128k x 8) Low Voltage EPROM
Functional Description
DEVICE OPERATION
The six modes of operation of the EPROM are listed in Table 1. It should be noted that all inputs for the six modes are at TTL levels. The power supplies required are VCC and VPP. The VPP power supply must be at 12.75V during the three programming modes, and must be at 3.3V in the other three modes. The VCC power supply must be at 6.5V during the three programming modes, and at 3.3V in the other three modes.
0.1 F capacitor be placed across VPP and VCC to ground to suppress spurious voltage transients which may damage the device. The data to be programmed is applied 8 bits in parallel to the data output pins. The levels required for the address and data inputs are TTL. When the address and data are stable, an active low, TTL program pulse is applied to the PGM input. A program pulse must be applied at each address location to be programmed. The EPROM is programmed with the LV Turbo Programming Algorithm shown in Figure 1. Each Address is programmed with a series of 50 s pulses until it verifies good, up to a maximum of 10 pulses. Most memory cells will program with a single 50 s pulse. (The standard National Semiconductor Algorithm may also be used, but it will have longer programming time.) The EPROM must not be programmed with a DC signal applied to the PGM input. Programming multiple EPROM in parallel with the same data can be easily accomplished due to the simplicity of the programming requirements. Like inputs of the parallel EPROM may be connected together when they are programmed with the same data. A low level TTL pulse applied to the PGM input programs the paralleled EPROM.
Read Mode
The EPROM has two control functions, both of which must be logically active in order to obtain data at the outputs. Chip Enable (CE) is the power control and should be used for device selection. Output Enable (OE) is the output control and should be used to gate data to the output pins, independent of device selection. Assuming that addresses are stable, address access time (tACC) is equal to the delay from CE to output (tCE). Data is available at the outputs tOE after the falling edge of OE, assuming that CE has been low and addresses have been stable for at least tACC -tOE.
Standby Mode
The EPROM has a standby mode which reduces the active power dissipation by over 99%, from 50 mW to 0.17 mW. The EPROM is placed in the standby mode by applying a CMOS high signal to the CE input. When in standby mode, the outputs are in a high impedance state, independent of the OE input.
Program Inhibit
Programming multiple EPROM's in parallel with different data is also easily accomplished. Except for CE, all like inputs (including OE and PGM) of the parallel EPROM may be common. A TTL low level program pulse applied to an EPROM's PGM input with CE at VIL and VPP at 12.75V will program that EPROM. A TTL high level CE input inhibits the other EPROM's from being programmed.
Output Disable
The EPROM is placed in output disable by applying a TTL high signal to the OE input. When in output disable all circuitry is enabled, except the outputs are in a high impedance state (TRISTATE).
Program Verify
A verify should be performed on the programmed bits to determine whether they were correctly programmed. The verify may be performed with V PP at 6.25V. VPP must be at VCC, except during programming and program verify.
Output OR-Tying
Because the EPROM is usually used in larger memory arrays, Fairchild has provided a 2-line control function that accommodates this use of multiple memory connections. The 2-line control function allows for: 1. the lowest possible memory power dissipation, and 2. complete assurance that output bus contention will not occur. To most efficiently use these two control lines, it is recommended that CE be decoded and used as the primary device selecting function, while OE be made a common connection to all devices in the array and connected to the READ line from the system control bus. This assures that all deselected memory devices are in their low power standby modes and that the output pins are active only when data is desired from a particular memory device.
AFTER PROGRAMMING
Opaque labels should be placed over the EPROM window to prevent unintentional erasure. Covering the window will also prevent temporary functional failure due to the generation of photo currents.
MANUFACTURER'S IDENTIFICATION CODE
The EPROM has a manufacturer's identification code to aid in programming. When the device is inserted in an EPROM programmer socket, the programmer reads the code and then automatically calls up the specific programming algorithm for the part. This automatic programming control is only possible with programmers which have the capability of reading the code. The Manufacturer's Identification code, shown in Table 2, specifically identifies the manufacturer and device type. The code for the NM27LV010 is "8F86", where "8F" designates that it is made by Fairchild Semiconductor, and "86" designates a 1 Megabit (128k x 8) part. The code is accessed by applying 12V 0.5V to address pin A9. Addresses A1-A8, A10-A16, and all control pins are held at VIL. Address pin A0 is held at VIL for the manufacturer's code, and held at VIH for the device code. The code is read on the lower eight data pins, O0-07. Proper code access is only guaranteed at 25C 5C.
Programming
CAUTION: Exceeding 14V on pin 1 (VPP) will damage the EPROM. Initially, and after each erasure, all bits of the EPROM are in the "1's" state. Data is introduced by selectively programming "0's" into the desired bit locations. Although only "0's" will be programmed, both "1's" and "0's" can be presented in the data word. The only way to change a "0" to a "1" is by ultraviolet light erasure. The EPROM is in the programming mode when the VPP power supply is at 12.75V and OE is at VIH. It is required that at least a
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NM27LV010 1,048,576-Bit (128k x 8) Low Voltage EPROM
Functional Description (Continued)
ERASURE CHARACTERISTICS
The erasure characteristics of the device are such that erasure begins to occur when exposed to light with wavelengths shorter than approximately 4000 Angstroms (A). It should be noted that sunlight and certain types of fluorescent lamps have wavelengths in the 3000A - 4000A range. The recommended erasure procedure for the EPROM is exposure to short wave ultraviolet light which has a wavelength of 2537A. The integrated dose (i.e., UV intensity x exposure time) for erasure should be a minimum of 30W-sec/cm2 . The EPROM should be placed within 1 inch of the lamp tubes during erasure. Some lamps have a filter on their tubes which should be removed before erasure. An erasure system should be calibrated periodically. The distance from lamp to device should be maintained at one inch. The erasure time increases as the square of the distance from the lamp (if distance is doubled the erasure time increases by factor of 4). Lamps lose intensity as they age. When a lamp has aged, the system should be checked to make certain full erasure is occur-
ring. Incomplete erasure will cause symptoms that can be misleading. Programmers, components, and even system designs have been erroneously suspected when incomplete erasure was the problem.
SYSTEM CONSIDERATION
The power switching characteristics of EPROMs require careful decoupling of the devices. The supply current, ICC, has three segments that are of interest to the system designer: the standby current level, the active current level, and the transient current peaks that are produced by voltage transitions on input pins. The magnitude of these transient current peaks is dependent on the output capacitance loading of the device. The associated VCC transient voltage peaks can be suppressed by properly selected decoupling capacitors. It is recommended that at least a 0.1 F ceramic capacitor be used on every device between VCC and GND. This should be a high frequency capacitor of low inherent inductance. In addition, at least a 4.7 F bulk electrolytic capacitor should be used between VCC and GND for each eight devices. The bulk capacitor should be located near where the power supply is connected to the array. The purpose of the bulk capacitor is to overcome the voltage drop caused by the inductive effects of the PC board traces.
Mode Selection
The modes of operation of the NM27LV010 are listed in Table 1. A single 3.3V power supply is required in the read mode. All inputs are TTL levels except for VPP and A9 for device signature.
TABLE 1. Modes Selection Pins Mode
Read Output Disable Standby Programming Program Verify Program Inhibit
Note 15: X can be VIL or VIH .
CE
VIL X (Note 15) VIH VIL VIL VIH
OE
VIL VIH X VIH VIL VIH
PGM
X X X VIL VIH X
VPP
VCC VCC VCC 12.75V 12.75V 12.75V
VCC
3.3V 3.3V 3.3V 6.25V 12.75V 6.25V
Outputs
DOUT High Z High Z DIN DOUT High Z
TABLE 2. Manufacturer's Identification Code Pins
Manufacturer Code Device Code
A0 (12)
VIL VIH
A9 (26)
12V 12V
O7 (21)
1 1
O6 (20)
0 0
O5 (19)
0 0
O4 (18)
0 0
O3 (17)
1 0
O2 (15)
1 1
O1 (14)
1 1
O0 (13)
1 0
Hex Data
8F 86
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NM27LV010 1,048,576-Bit (128k x 8) Low Voltage EPROM
Physical Dimensions inches (millimeters) unless otherwise noted
20.0 0.2 1
32
0.96 - 1.06
0.5
16
17
8.0 0.2
0.15-0.25 TYP 18.4 0.1
0.1500.08 (Leadframe Thickness)
0.10 See Detail A
1.27 MAX 0-5
0-0.25
0.4-0.6
DETAIL A Typical
32-Lead TSOP Package (T) Order Number NM27LV010TXXX Package Number MBH32A
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NM27LV010 1,048,576-Bit (128k x 8) Low Voltage EPROM
Physical Dimensions inches (millimeters) unless otherwise noted
0.485-0.495 [12.32-12.57] 0.007[0.18] S B D-E S 0.449-0.453 [11.40-11.51] -A0.045 [1.143] 0.000-0.010 [0.00-0.25] Polished Optional 4 5 0.549-0.553 [13.94-14.05] -B0.585-0.595 [14.86-15.11] 0.007[0.18] S B D-E S 0.002[0.05] S B -D1 30 29 0.106-0.112 [2.69-2.84] 0.023-0.029 [0.58-0.74] -HBase Plane
0.015 [0.38] Min Typ
60
( [10.16] )
-G0.541-0.545 [13.74-13-84] -F-
0.400
0.490-0530 [12.45-13.46] 0.015[0.38] S C D-E, F-G S
13 14 0.002[0.05] S A 0.007[0.18] S 0.007[0.18] S A F-G S -E20
21 0.050 See detail A -J0.007[0.18] M 0.078-0.095 [1.98-2.41] -C0.005 Max [0.13] 0.0100 [0.254] C D-E, F-G S 0.013-0.021 TYP [0.33-0.53]
A F-G S
0.123-0.140 [3.12-3.56] 0.004[0.10]
0.118-0.129 [3.00-3.28] 0.010[0.25] L B A D-E, F-G S B
0.042-0.048 45X [1.07-1.22]
B
0.026-0.032 Typ [0.66-0.81] 0.007[0.18] S H D-E, F-G S
32-Lead PLCC Package Order Number NM27LV010VXXX Package Number VA32A
,,
0.025 [0.64] Min 0.025 [0.64] Min 0.021-0.027 [0.53-0.69] 0.006-0.012 [0.15-0.30] 0.019-0.025 [0.48-0.64] 0.027-0.033 [0.69-0.84]
0.020 [0.51]
0.045 [1.14]
Detail A Typical Rotated 90
R
0.030-0.040 [0.76-1.02]
0.065-0.071 [1.65-1.80]
0.053-0.059 [1.65-1.80]
0.031-0.037 [0.79-0.94]
Section B-B Typical
Life Support Policy
Fairchild's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President of Fairchild Semiconductor Corporation. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user.
Fairchild Semiconductor Americas Customer Response Center Tel. 1-888-522-5372 Fairchild Semiconductor Europe Fax: +44 (0) 1793-856858 Deutsch Tel: +49 (0) 8141-6102-0 English Tel: +44 (0) 1793-856856 Francais Tel: +33 (0) 1-6930-3696 Italiano Tel: +39 (0) 2-249111-1
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Fairchild Semiconductor Hong Kong 8/F, Room 808, Empire Centre 68 Mody Road, Tsimshatsui East Kowloon. Hong Kong Tel; +852-2722-8338 Fax: +852-2722-8383
Fairchild Semiconductor Japan Ltd. 4F, Natsume Bldg. 2-18-6, Yushima, Bunkyo-ku Tokyo, 113-0034 Japan Tel: 81-3-3818-8840 Fax: 81-3-3818-8841
Fairchild does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and Fairchild reserves the right at any time without notice to change said circuitry and specifications.
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